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Die Internationale Marke HIREF wurde als Wortmarke am 17.04.2003 bei der Weltorganisation für geistiges Eigentum angemeldet.
| Markenform | Wortmarke |
| Aktenzeichen | 806569 |
| Registernummer | 30255813.6/01 |
| Länder | 
|
| Basismarke |
Nr. 302 55 813.6/01,
16. Dezember 2002
|
| Anmeldedatum | 17. April 2003 |
| Ablaufdatum | 17. April 2033 |
Markeninhaber
Einsteinstraße 172
81677 München
DE
81677 München
DE
Markenvertreter
Johannes-Hess-Straße 24
84489 Burghausen
DE
Waren und Dienstleistungen
01
Chemical products used in industry, science, photography,
agriculture, horticulture and forestry; silanes;
hydrochloric acid; conductive and semiconductive, doped and
undoped organic polymers; inorganic elements and compounds
in the form of hyperpure crystals; gallium-gadolinium
garnet; doped and undoped, polycrystalline and
monocrystalline inorganic semiconductor material,
particularly in the form of crystals, granules and powders,
in sawed, lapped, polished, etched, and coated form; doped
and undoped, polycrystalline and monocrystalline inorganic
semiconductor material, particularly in the form of rods,
tubes, sheets (wafers) and moulded bodies, in sawed, lapped,
polished, etched and coated form (included in this class);
substrates coated with semiconductor material in the form of
sheets (wafers), rods, tubes, granules and powders;
substrates coated with semiconductor material in the form of
moulded bodies (included in this class); hyperpure silicon
for the electrical and electronic industries;
monocrystalline silicon in the form of rods, blocks, sheets
(wafers) and powders; polycrystalline silicon in the form of
powders and granules; polycrystalline silicon in the form of
blocks, sheets and moulded bodies (included in this class)
09
Organic semiconductor material; doped and undoped
polycrystalline and monocrystalline inorganic semiconductor
material, particularly in the form of rods, tubes, sheets
(wafers) and moulded bodies, in sawed, lapped, polished
etched and coated form (included in this class); substrates
coated with semiconductor material in the form of moulded
bodies (included in this class); polycrystalline silicon in
the form of blocks, sheets and moulded bodies (included in
this class)
Die Bezeichnungen wurden automatisch übersetzt. Übersetzung anzeigen
Markenhistorie
| Datum | Belegnummer | Bereich | Eintrag |
|---|---|---|---|
| 17. April 2023 | 2023/9 Gaz | Verlängerung | |
| 17. April 2013 | 2013/16 Gaz | Verlängerung | |
| 13. Juni 2005 | 2006/9 Gaz | KR | Entscheidung zu Widerspruch |
| 29. November 2004 | 2004/42 Gaz | NO | RAW: Protection Granted |
| 25. Oktober 2004 | 2004/37 Gaz | JP | Entscheidung zu Widerspruch |
| 29. März 2004 | 2004/8 Gaz | KR | Ablehnung |
| 03. März 2004 | 2004/6 Gaz | IE | RAW: Protection Granted |
| 21. Januar 2004 | 2004/3 Gaz | GB | RAW: Protection Granted |
| 29. Dezember 2003 | 2004/1 Gaz | JP | Ablehnung |
| 23. Dezember 2003 | 2004/1 Gaz | AU | RAW: Protection Granted |
| 17. April 2003 | 2003/15 Gaz | DE | Eintragung |
| Teilweise Löschung |
ID: 14806569