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Die Internationale Marke SiCrystal wurde als Wortmarke am 02.02.2021 bei der Weltorganisation für geistiges Eigentum angemeldet.
| Markenform | Wortmarke |
| Aktenzeichen | 1606695 |
| Registernummer | 302020110541 |
| Länder | 
|
| Basismarke |
Nr. 30 2020 110 541,
24. September 2020
|
| Anmeldedatum | 02. Februar 2021 |
| Ablaufdatum | 02. Februar 2031 |
Markeninhaber
Thurn-und-Taxis-Straße 20
90411 Nürnberg
DE
90411 Nürnberg
DE
Markenvertreter
Königstraße 2
90402 Nürnberg
DE
Waren und Dienstleistungen
01
Chemical products for industrial and scientific purposes,
namely polycrystalline or monocrystalline materials, in
particular for use in mechanics, optics and semiconductor
technology and in particular for use as gemstones;
crystalline semiconductor material; semiconductor single
crystals; all aforementioned products based on silicon
carbide or on aluminium oxide or on II-VI semiconductors, in
particular zinc oxide, zinc sulphide, zinc selenide,
magnesium oxide, magnesium sulphide, magnesium selenide,
cadmium selenide or cadmium telluride, or on III-V
semiconductors, in particular boron nitride, aluminium
nitride, gallium nitride, gallium phosphide or gallium
arsenide
09
Electronic materials, namely semiconductor materials, in
particular in form of wafers, as far as included in this
class; semiconductors; semiconductor wafers; wafers for
power electronic components; all aforesaid products based on
silicon carbide or on aluminium oxide or on II-VI
semiconductors, in particular zinc oxide, zinc sulphide,
zinc selenide, magnesium oxide, magnesium sulphide,
magnesium selenide, cadmium selenide or cadmium telluride,
or on III-V semiconductors, in particular boron nitride,
aluminium nitride, gallium nitride, gallium phosphide or
gallium arsenide
40
Processing of semiconductor materials, semiconductor wafers
or semiconductor components; customer-specific contract
manufacturing or processing of semiconductor wafers; all
aforesaid services for semiconductors based on silicon
carbide or aluminium oxide or on II-VI semiconductors, in
particular zinc oxide, zinc sulphide, zinc selenide,
magnesium oxide, magnesium sulphide, magnesium selenide,
cadmium selenide or cadmium telluride, or on III-V
semiconductors, in particular boron nitride, aluminium
nitride, gallium nitride, gallium phosphide or gallium
arsenide
Die Bezeichnungen wurden automatisch übersetzt. Übersetzung anzeigen
Markenhistorie
| Datum | Belegnummer | Bereich | Eintrag |
|---|---|---|---|
| 31. Juli 2023 | 2023/31 Gaz | EM | RAW: Rule 18ter(2)(ii) GP following a provisional refusal |
| 05. November 2022 | 2022/45 Gaz | US | RAW: Rule 18ter(2)(ii) GP following a provisional refusal |
| 22. September 2022 | 2022/38 Gaz | JP | RAW: Rule 18ter(2)(i) GP following a provisional refusal |
| 16. August 2022 | 2022/36 Gaz | IN | Ablehnung |
| 26. Mai 2022 | 2022/22 Gaz | JP | Ablehnung |
| 21. März 2022 | 2022/12 Gaz | CN | Ablehnung |
| 06. Dezember 2021 | 2021/49 Gaz | RU | Ablehnung |
| 23. November 2021 | 2022/2 Gaz | RAW: Limitation | |
| 29. September 2021 | 2021/39 Gaz | US | Ablehnung |
| 13. September 2021 | 2021/38 Gaz | EM | Ablehnung |
| 31. August 2021 | 2021/36 Gaz | IN | Ablehnung |
| 02. Februar 2021 | DE | Eintragung |
ID: 141606695