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The Union trademark Low Loss GaN was filed as Word mark on 08/07/2024 at the European Union Intellectual Property Office.
It was registered as a trademark on 12/13/2024.
The current status of the mark is "Trademark registered".
| Trademark form | Word mark |
| File reference | 019065003 |
| Application date | August 7, 2024 |
| Publication date | September 5, 2024 |
| Entry date | December 13, 2024 |
| Expiration date | August 7, 2034 |
Trademark owner
No.2 Wangjiabang Lane, Suzhou Industrial Park
Suzhou Jiangsu
CN
Suzhou Jiangsu
CN
Trademark representatives
6 Impasse Michel Labrousse
31100 Toulouse
FR
goods and services
9
Semiconductors; wafers for integrated circuits; silicon epitaxial wafer; amplifiers; sensors; light-emitting diodes [LED]; triodes; inverters [electricity]; semiconductor devices; step-up transformers
42
Research in the field of physics; technological research; scientific research; conducting technical project studies; chemical research; research and development of new products for others; industrial design; material testing; scientific laboratory services; quality testing
ID: 11019065003