WIPOProtect this trademark from copycats!
With our trademark monitoring alerts, you are automatically notified by email about copycats and free riders.
The International trademark SMARTSIC was filed as Word mark on 03/31/2022 at the World Intellectual Property Organization.
| Trademark form | Word mark |
| File reference | 1683335 |
| Register number | 4807371 |
| Countries | 
|
| Base trademark |
No. 4807371,
February 11, 2022
|
| Application date | March 31, 2022 |
| Expiration date | March 31, 2032 |
Trademark owner
Parc Technoloqique des Fontaines,
Chemin des Franques
FR
Chemin des Franques
FR
Trademark representatives
20 rue de Chazelles
F-75847 PARIS Cedex 17
FR
goods and services
09
Multi-layer substrates consisting of semiconductors;
multi-layer substrates consisting of semiconductors for
optoelectronics, microelectronics, photonics, integrated
circuits, radio frequency (RF) or power electronic
components, for transistors, thyristors and diodes, for
microsystems, for photonic components, for electronic
devices for switching or converting electrical currents, for
devices conducting or filtering radio frequency electric
currents, for piezoelectric devices, for quantum
cryptography devices, for light emitting diodes
40
Treatment of semiconductor materials, namely mechanical,
chemical, physical treatment, polishing and gluing of
semiconductor material surfaces; treatment of substrates for
microelectronics, optoelectronics, microsystems, radio
frequency (RF) or power components, photonics; treatment of
semiconductor wafers and semiconductors; polishing
semiconductor wafers; transferring a layer of materials,
semiconductors or components to any media; treatment of
materials, namely, ion implantation in materials; treatment
of materials, namely, deposing layers of materials,
especially thin layer chemical (CVD: Chemical Vapor
Deposition) or physical (PVD: Physical Vapor Deposition) gas
deposition; treatment of materials, namely, manufacturing by
sublimation (PVT: Physical Vapor Transport); treatment of
materials, namely, growth of material layers, especially in
epitaxy; treatment of materials, namely, manufacturing by
powder sintering processes
42
Testing semiconductor materials; research and development of
new products in the field of multilayer substrates,
semiconductor wafers and semiconductors for integrated
circuits, for electronic radio frequency (RF) or power
components, for transistors, thyristors and diodes, for
microsystems, for optoelectronic components, for photonic
components, for electronic devices for switching or
converting electrical currents, for devices conducting or
filtering radio frequency electric currents for
piezoelectric devices, for quantum cryptography devices, for
light emitting diodes; research and development of new
products in the field of transferring microelectronic
circuits or microsystems on all kinds of media, in the field
of material, semiconductor or component layer transfer on
all media, in the field of ion implantation in materials, in
the field of material layer deposition, especially in
epitaxy, in the field of chemical (CVD: Chemical Vapor
Deposition) or physical (PVD: Physical Vapor Deposition) gas
deposition, in the field of sublimation manufacturing (PVT:
Physical Vapor Transport), in the field of powder sintering
process manufacturing; engineering and engineering services
in the field of multilayer substrates, semiconductor wafers
and semiconductors for integrated circuits, for electronic
radio frequency (RF) or power components, for transistors,
thyristors and diodes, for microsystems, for optoelectronic
components, for photonic components, for electronic devices
for switching or converting electrical currents, or for
devices conducting or filtering electric radio frequency
currents, for piezoelectric devices, for quantum
cryptography devices, for light emitting diodes; engineering
and engineering services in the field of transferring
microelectronic circuits or microsystems on all kinds of
media, in the field of material, semiconductor or component
layer transfer on all media, in the field of ion
implantation in materials, in the field of material layer
deposition, especially in epitaxy, in the field of chemical
(CVD: Chemical Vapor Deposition) or physical (PVD: Physical
Vapor Deposition) gas deposition, in the field of
sublimation manufacturing (PVT: Physical Vapor Transport),
in the field of powder sintering process manufacturing;
technical assistance and support services, namely, technical
advice for the development of new products in the field of
multilayer substrates, semiconductor wafers and
semiconductors for integrated circuits, for electronic radio
frequency (RF) or power components, for transistors,
thyristors and diodes, for microsystems, for optoelectronic
components, for photonic components, for electronic devices
for switching or converting electrical currents, or for
devices conducting or filtering radio frequency electric
currents, for piezoelectric devices, for quantum
cryptography devices, for light emitting diodes; technical
assistance and support services, namely, technical advice
for the field of transferring microelectronic circuits or
microsystems on all kinds of media, in the field of material
layer transfer, semiconductors or components on all media,
in the field of ion implantation in materials, in the field
of layer deposition of materials, especially in epitaxy,in
the field of chemical (CVD: Chemical Vapor Deposition) or
physical (PVD: Physical Vapor Deposition) gas deposition, in
the field of sublimation manufacturing (PVT: Physical Vapor
Transport), in the field of powder sintering process
manufacturing
Trademark history
| Date | Document number | Area | Entry |
|---|---|---|---|
| June 29, 2023 | 2023/26 Gaz | JP | Rejection |
| April 26, 2023 | 2023/22 Gaz | SG | Rejection |
| March 31, 2023 | 2023/14 Gaz | CN | Rejection |
| March 19, 2023 | 2023/12 Gaz | US | Rejection |
| February 24, 2023 | 2023/9 Gaz | EM | RAW: Rule 18ter(2)(ii) GP following a provisional refusal |
| December 14, 2022 | 2022/50 Gaz | GB | Rejection |
| September 20, 2022 | 2022/39 Gaz | EM | Rejection |
| March 31, 2022 | 2022/35 Gaz | FR | Registration |
ID: 141683335