HSC

WIPO WIPO 2005

Protect this trademark from copycats!

With our trademark monitoring alerts, you are automatically notified by email about copycats and free riders.

The International trademark HSC was filed as Word mark on 06/03/2005 at the World Intellectual Property Organization.

Trademark Details Last update: April 14, 2022

Trademark form Word mark
File reference 857679
Register number 30468977.7/01
Countries Denmark Finland United Kingdom Japan South Korea Norway China Czechia Spain France Italy Poland Ukraine
Base trademark DE No. 304 68 977.7/01, January 31, 2005
Application date June 3, 2005
Expiration date June 3, 2025

Trademark owner

12334 Geddes Road,
P.O. Box 80
US

Trademark representatives

Braunsberger Feld 29 51429 Bergisch Gladbach DE

goods and services

01 Chemicals used in the manufacturing of semiconductor devices such as transistors, rectifiers, integrated circuits and other electronic devices, particularly polycrystalline silicon and silicon source chemicals
09 Semiconductor devices such as transistors, rectifiers, integrated circuits, and other electronic devices, particularly made from polycrystalline silicon and silicon source chemicals

Trademark history

Date Document number Area Entry
June 3, 2015 2015/23 Gaz Extension
March 9, 2012 2012/11 Gaz NO Rejection
February 13, 2012 2012/7 Gaz CN Rejection
March 21, 2011 2011/27 Gaz DE Correction
June 19, 2008 2008/26 Gaz JP RAW: Final Reversing Refusal
January 4, 2007 2007/3 Gaz PL RAW: Final Reversing Refusal
November 20, 2006 2007/52 Gaz KR Decision on opposition
June 29, 2006 2006/27 Gaz PL Rejection
June 6, 2006 2006/25 Gaz CN Rejection
May 29, 2006 2006/24 Gaz KR Rejection
March 30, 2006 2006/14 Gaz JP Rejection
March 29, 2006 2006/16 Gaz GB RAW: Protection Granted
June 3, 2005 2005/34 Gaz DE Registration

ID: 14857679