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The International trademark SiCrystal was filed as Word mark on 02/02/2021 at the World Intellectual Property Organization.
| Trademark form | Word mark |
| File reference | 1606695 |
| Register number | 302020110541 |
| Countries | 
|
| Base trademark |
No. 30 2020 110 541,
September 24, 2020
|
| Application date | February 2, 2021 |
| Expiration date | February 2, 2031 |
Trademark owner
Thurn-und-Taxis-Straße 20
90411 Nürnberg
DE
90411 Nürnberg
DE
Trademark representatives
Königstraße 2
90402 Nürnberg
DE
goods and services
01
Chemical products for industrial and scientific purposes,
namely polycrystalline or monocrystalline materials, in
particular for use in mechanics, optics and semiconductor
technology and in particular for use as gemstones;
crystalline semiconductor material; semiconductor single
crystals; all aforementioned products based on silicon
carbide or on aluminium oxide or on II-VI semiconductors, in
particular zinc oxide, zinc sulphide, zinc selenide,
magnesium oxide, magnesium sulphide, magnesium selenide,
cadmium selenide or cadmium telluride, or on III-V
semiconductors, in particular boron nitride, aluminium
nitride, gallium nitride, gallium phosphide or gallium
arsenide
09
Electronic materials, namely semiconductor materials, in
particular in form of wafers, as far as included in this
class; semiconductors; semiconductor wafers; wafers for
power electronic components; all aforesaid products based on
silicon carbide or on aluminium oxide or on II-VI
semiconductors, in particular zinc oxide, zinc sulphide,
zinc selenide, magnesium oxide, magnesium sulphide,
magnesium selenide, cadmium selenide or cadmium telluride,
or on III-V semiconductors, in particular boron nitride,
aluminium nitride, gallium nitride, gallium phosphide or
gallium arsenide
40
Processing of semiconductor materials, semiconductor wafers
or semiconductor components; customer-specific contract
manufacturing or processing of semiconductor wafers; all
aforesaid services for semiconductors based on silicon
carbide or aluminium oxide or on II-VI semiconductors, in
particular zinc oxide, zinc sulphide, zinc selenide,
magnesium oxide, magnesium sulphide, magnesium selenide,
cadmium selenide or cadmium telluride, or on III-V
semiconductors, in particular boron nitride, aluminium
nitride, gallium nitride, gallium phosphide or gallium
arsenide
Trademark history
| Date | Document number | Area | Entry |
|---|---|---|---|
| July 31, 2023 | 2023/31 Gaz | EM | RAW: Rule 18ter(2)(ii) GP following a provisional refusal |
| November 5, 2022 | 2022/45 Gaz | US | RAW: Rule 18ter(2)(ii) GP following a provisional refusal |
| September 22, 2022 | 2022/38 Gaz | JP | RAW: Rule 18ter(2)(i) GP following a provisional refusal |
| August 16, 2022 | 2022/36 Gaz | IN | Rejection |
| May 26, 2022 | 2022/22 Gaz | JP | Rejection |
| March 21, 2022 | 2022/12 Gaz | CN | Rejection |
| December 6, 2021 | 2021/49 Gaz | RU | Rejection |
| November 23, 2021 | 2022/2 Gaz | RAW: Limitation | |
| September 29, 2021 | 2021/39 Gaz | US | Rejection |
| September 13, 2021 | 2021/38 Gaz | EM | Rejection |
| August 31, 2021 | 2021/36 Gaz | IN | Rejection |
| February 2, 2021 | DE | Registration |
ID: 141606695