GaN FET

WIPO WIPO 2020

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The International trademark GaN FET was filed as Figurative mark on 07/14/2020 at the World Intellectual Property Organization.

Logodesign (Wiener Klassifikation)

#Letters presenting a special form of writing

Trademark Details Last update: July 28, 2022

Trademark form Figurative mark
File reference 1552719
Countries em Japan South Korea United States of America (USA)
Base trademark CN No. , August 3, 2024
Application date July 14, 2020
Expiration date July 14, 2030

Trademark owner

39 Jin Yuan Er Rd.,
Hi-Tech District, Zhuhai City
CN

Trademark representatives

45/F, CTF Finance Center, No.6 Zhujiang East Road, CN

goods and services

09 Semiconductor chips; wafers for integrated circuits; detectors; radar apparatus
40 Custom assembling of materials for others; planing of materials; laminating; material treatment information; electroplating; refining services; optical glass grinding; decontamination of hazardous materials; burnishing by abrasion; millworking
42 Calibration [measuring]; material testing; chemical analysis

Trademark history

Date Document number Area Entry
June 6, 2022 2022/23 Gaz US Rejection
March 25, 2022 2022/13 Gaz KR Rejection
September 10, 2021 2021/37 Gaz JP Rejection
August 19, 2021 2021/34 Gaz KR Rejection
February 23, 2021 2021/8 Gaz EM Rejection
November 16, 2020 2020/47 Gaz US Rejection
July 14, 2020 2020/38 Gaz CN Registration

ID: 141552719